German A., a 43-year-old Russian engineer, is accused of secretly supplying sensitive technical information from ASML, NXP, and TSMC to Russia, allegedly to assist in building a 28nm-capable fab there, reports NRC. His illicit earnings were about €40,000, and he now faces 18 to 32 months in prison. Though German A. alone could not steal full designs for a semiconductor, a coordinated group could potentially assist semiconductor production in Russia.